飞思卡尔RF场效应管MRF9045设计套件【pdf】

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MRF9045LR1
MRF9045LSR1
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies
up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common-source amplifier applications
in 28 volt base station equipment.

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