SGA9189Z Medium Power Discrete SiGe Transistor

更新时间 2016-03-08

标签:晶体管

RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA9189Z is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.

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英文文档 sga9189z_data_sheet pdf 1.0 345.34KB 128