SGA8543Z HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR

更新时间 2016-03-10

RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 3.5GHz. The SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements.

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英文文档 sga8543z_product_data_sheet pdf 1.0 804.17KB 68