SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS

更新时间 2016-04-06

标签:放大器

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

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英文文档 spa1118z_data_sheet pdf 1.0 1023.49KB 91