SGA8343Z LOW NOISE, HIGH GAIN SiGe HBT

更新时间 2016-04-19

标签:放大器

RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost.

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英文文档 sga8343z_product_data_sheet pdf 1.0 1.37MB 46