RFG1M09090
700 - 1000 MHz, 90 Watt GaN Power Amplifier
关键性能
Advanced GaN HEMT Technology
Typical Peak Modulated Power > 120W
Advanced Heat-Sink Technology
Single Circuit for 865MHz To 960MHz
48V Operation Typical Performance:
POUT = 44dBm
Gain = 20dB
Drain Efficiency = 38%
ACP = -33.5dBc
Linearizable to - 55dBc with DPD - 25 to 85 degrees C Operating Temperature
Optimized for Video Bandwidth and Minimized Memory Effects
RF Tested for 3GPP Performance
RF Tested for Peak Power Using IS95
Large Signal Models Available
RFG1M09180
700 - 1000 MHz, 180 Watt GaN Power Amplifier
关键性能
Advanced GaN HEMT Technology
Typical Peak Modulated Power > 240W
Advanced Heat Sink Technology
Single Circuit for 865MHz To 960MHz
48V Operation Typical Performance:
POUT = 47dBm
Gain = 20dB
Drain Efficiency = 39%
ACP = -32.5dBc
Linearizable to - 55dBc with DPD
-25 to 85 degrees C Operating Temperature
Optimized for Video Bandwidth and Minimized Memory Effects
RF Tested for 3GPP Performance
RF Tested for Peak Power Using IS95
Large Signal Models Available
Frequency range: 0.03 - 3 GHz
Output power (P3dB): 6.0W at 2 GHz
Linear gain: 18 dB typical at 2 GHz
Typical PAE3dB: 63% at 2 GHz
Operating voltage: 32V
Low thermal resistance package
CW and pulse capable
3 x 3 mm package
Frequency: DC to 4 GHz
Output Power (P3dB): 44.6 dBm
Linear Gain: 17 dB
Operating Voltage: 32 V
Drain Efficiency: 64% at P3dB
Package Dimensions: 3 x 4 mm QFN
TGF2819-FL
DC - 3.5 GHz, 100 Watt, 32 - 50 V GaN RF Power Transistor
关键性能
Frequency range: DC - 3.5GHz
Output power (P3dB): 126 W at 3.3GHz
Linear gain: > 14 dB typical at 3.3 GHz
Typical PAE3dB: > 58 % at 3.3 GHz
Operating voltage: 32 - 50V
Low thermal resistance package
频率最小值(MHz) DC
频率最大值(MHz) 3,500
增益(dB) > 14
Psat(dBm) 51
PAE(%) 58
VD(V) 32 to 50
Idq(mA) 250
封装类型 NI-360
TGF2952
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT
关键性能
Frequency range: DC - 14 GHz
38.4dBm nominal Psat at 3 GHz
75.7% maximum PAE at 3 GHz
20.4dB nominal power gain at 3GHz
Bias: Vd = 32V, Idq = 25mA
Technology: 0.25 um power GaN on SiC
Chip dimensions: 0.82 x 1.01 x 0.10 mm
频率最小值(MHz) DC
频率最大值(MHz) 14,000
增益(dB) 20.4
Psat(dBm) 38.4
PAE(%) 75.7
VD(V) 32
Idq(mA) 25
封装类型 Die
T2G6000528-Q3
DC - 6 GHz, 7 Watt, 28 V GaN RF Power Transistor
关键性能
Frequency: DC to 6 GHz
Linear Gain: 17 dB at 3.3 GHz
Operating Voltage: 28 V
Output Power (P3dB): 10 W at 3.3 GHz
Lead-free and RoHS compliant
Low thermal resistance package
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楼主
发表于 2017-6-27 17:57:03
