QPD2194
300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor
关键性能
Frequency Range: 1.8-2.2 GHz
Operating Drain Voltage: +48 V
Maximum Output Power (PSAT): 371 W
Maximum Drain Efficiency: 78.8%
Efficiency-Tuned P3dB Gain: 18.0 dB
2-lead, earless, ceramic flange NI400 package
TGF2023-2-01
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
关键性能
Frequency range: DC to 18 GHz
38 dBm nominal Psat at 3 GHz
71.6% maximum PAE
18 dB nominal power gain at 3 GHz
Bias: Vd = 12 -32 V, Idq = 125 mA
Chip dimensions: 0.82 x 0.66 x 0.10 mm
频率最小值(MHz) DC
频率最大值(MHz) 18,000
增益(dB) 18
Psat(dBm) 38
PAE(%) 71.6
VD(V) 12 to 32
Idq(mA) 25 to 125
封装类型 Die
TGF2819-FL
DC - 3.5 GHz, 100 Watt, 32 - 50 V GaN RF Power Transistor
关键性能
Frequency range: DC - 3.5GHz
Output power (P3dB): 126 W at 3.3GHz
Linear gain: > 14 dB typical at 3.3 GHz
Typical PAE3dB: > 58 % at 3.3 GHz
Operating voltage: 32 - 50V
Low thermal resistance package
频率最小值(MHz) DC
频率最大值(MHz) 3,500
增益(dB) > 14
Psat(dBm) 51
PAE(%) 58
VD(V) 32 to 50
Idq(mA) 250
封装类型 NI-360
TGF2956
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT
关键性能
Frequency range: DC - 12 GHz
47.6dBm nominal Psat at 3 GHz
69.7% maximum PAE at 3 GHz
19.3dB nominal power gain at 3 GHz
Bias: Vd = 32V, Idq = 200mA
Chip dimensions: 0.82 x 2.88 x 0.10 mm
频率最小值(MHz) DC
频率最大值(MHz) 12,000
增益(dB) 19.3
Psat(dBm) 47.6
PAE(%) 69.7
VD(V) 32
Idq(mA) 200
封装类型 Die
T2G6000528-Q3
DC - 6 GHz, 7 Watt, 28 V GaN RF Power Transistor
关键性能
Frequency: DC to 6 GHz
Linear Gain: 17 dB at 3.3 GHz
Operating Voltage: 28 V
Output Power (P3dB): 10 W at 3.3 GHz
Lead-free and RoHS compliant
Low thermal resistance package
RFG1M09090
700 - 1000 MHz, 90 Watt GaN Power Amplifier
关键性能
Advanced GaN HEMT Technology
Typical Peak Modulated Power > 120W
Advanced Heat-Sink Technology
Single Circuit for 865MHz To 960MHz
48V Operation Typical Performance:
POUT = 44dBm
Gain = 20dB
Drain Efficiency = 38%
ACP = -33.5dBc
Linearizable to - 55dBc with DPD - 25 to 85 degrees C Operating Temperature
Optimized for Video Bandwidth and Minimized Memory Effects
RF Tested for 3GPP Performance
RF Tested for Peak Power Using IS95
Large Signal Models Available
Frequency: DC to 4 GHz
Output Power (P3dB): 44.6 dBm
Linear Gain: 17 dB
Operating Voltage: 32 V
Drain Efficiency: 64% at P3dB
Package Dimensions: 3 x 4 mm QFN
RFG1M20180
1.8 - 2.2 GHz, 180 Watt GaN Power Amplifier
关键性能
Advance GaN HEMT Technology
Typical Peak Modulated Power > 180W
Advanced Heat-Sink Technology
Single Circuit for 1.8GHz to 2.2GHz
48V Operation Typical Performance:
POUT = 45.5dBm
Gain = 15dB
Drain Efficiency = 31%
ACP = -38dBc
Linearizable to -55dBc with DPD
-25 to 85 degrees C Operating Temperature
Optimized for Video Bandwidth and Minimized Memory Effects
RF Tested for 3GPP Performance
RF Tested for Peak Power Using IS95
Large Signal Models Available
TGF3021-SM
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor
关键性能
Frequency range: 30 MHz-4.0 GHz
Output power (P3dB): 36 W at 2.0 GHz
Linear gain: 19.3 dB typical at 2.0 GHz
Typical PAE3dB: 72.7 % at 2.0 GHz
Operating voltage: 32 V
Low thermal resistance package
CW and pulse capable
3 x 4 mm package
/2 
发表于 2017-6-27 18:09:26
