介绍氮化镓（GAN）以及TriQuint半导体的解决方案

document.getElementById("video").style.height=document.getElementById("video").scrollWidth*9/16+"px"</script> <p class="text-muted clearfix"> <span class="pull-right">2060 观看</span> 上传于 2013-03-21 16:57:49 <div class="tag-terms"><span class="tag-label">标签：</span><a href="/tag/%E6%B0%AE%E5%8C%96%E9%95%93/" title="氮化镓" target="_blank">氮化镓</a><a href="/tag/GAN/" title="GAN" target="_blank">GAN</a></div> <p>视频将介绍氮化镓技术带來的的优势和其将推动的应用，还讨论TriQuint半导体公司的氮化镓产品解决方案。</p> </div> <div class="main-block1"> <div class="panel1 panel-default1 panel-main1"> <div class="panel-heading1"> <span class="pi-icon-dot-o1"></span> <div class="pi-panel-heading-inner1"> 继续阅读 </div> </div> <div class="panel-body1"> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="/article/id-338680" title="从硅基到氮化镓：快充技术的跨越式升级">从硅基到氮化镓：快充技术的跨越式升级</a> </div> <div class="clearfix article-desc1"> <p> 氮化镓（GaN）技术凭借其高电子迁移率、高击穿电场强度和低导通电阻等特性，在快充领域实现了从硅基到氮化镓的跨越式升级。其高频开关能力大幅提升电能转换效率，缩短充电时间；高击穿电场强度确保在复杂电网环境下稳定工作；低导通电阻和高热导率降低能量损耗与发热量。 </p> </div> </div> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="/article/id-338659" title="从实验室到商用：GaN（氮化镓）如何颠覆射频功率放大器？">从实验室到商用：GaN（氮化镓）如何颠覆射频功率放大器？</a> </div> <div class="clearfix article-desc1"> <p> 氮化镓（GaN）作为第三代宽禁带半导体材料，凭借高击穿电场、高电子饱和漂移速度及良好热导率等特性，显著提升射频功率放大器性能。相比硅基、砷化镓器件，其在功率输出、效率、高频特性与线性度上优势突出。尽管面临成本与可靠性挑战，通过工艺优化和规模化生产逐步改善，在5G、军事、卫星通信等领域应用前景广阔。 </p> </div> </div> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="/article/id-338655" title="氮化镓器件：6G网络技术革新的核心驱动力">氮化镓器件：6G网络技术革新的核心驱动力</a> </div> <div class="clearfix article-desc1"> <p> 在6G网络技术革新中，氮化镓（GaN）器件凭借独特优势成为关键。其大禁带宽度、高电子迁移率等优异物理特性，使其能在高频高温下稳定工作，实现高效功率放大与信号处理。GaN器件有效满足6G高频通信需求，提升系统抗干扰性，助力空天地一体化，推动技术创新。 </p> </div> </div> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="/article/id-338637" title="氮化镓HEMT：射频前端革命的“核芯”驱动力">氮化镓HEMT：射频前端革命的“核芯”驱动力</a> </div> <div class="clearfix article-desc1"> <p> 氮化镓高电子迁移率晶体管（GaN HEMT）凭借高电子迁移率、大禁带宽度及高击穿场强特性，在射频前端展现显著优势。其独特二维电子气结构赋予器件优异频率响应、功率密度与能效，广泛应用于基站、卫星及雷达领域。 </p> </div> </div> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="/article/id-338636" title="从芯片级集成到高功率架构，解锁射频放大器">从芯片级集成到高功率架构，解锁射频放大器</a> </div> <div class="clearfix article-desc1"> <p> 在通信技术高速发展的浪潮下，射频放大器作为无线通信系统的核心组件，其性能直接决定信号传输的质量与效率。LDMOS材料凭借成熟工艺占据一定市场，但在高频应用中存在局限；GaN材料以高电子迁移率等特性脱颖而出。通过多级放大器拓扑优化、匹配网络设计及散热技术革新，有效实现高功率密度与能效的平衡。 </p> </div> </div> </div> </div> </div> <script> $("video").bind("contextmenu",function(){//取消右键事件 return false; }); </script><script type="text/javascript"> window.onload = function() { var user; $.ajax({ cache: false, async: false, dataType: 'json', type: 'get', url: '/system/index/user', success: function (e) { user = e; } }); insertAccessRecord({ 'page' : 'video-detail', 'action' : 'view', 'type' : 'video', 'param1' : '射频技术', 'param2' : '介绍氮化镓（GAN）以及TriQuint半导体的解决方案', 'uid' : user ? 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